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| HiPerRF TM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFX 55N50F IXFK 55N50F VDSS = 500 V ID25 = 55 A RDS(on) = 85 m trr 250 ns PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings G (TAB) D 500 500 20 30 55 220 55 60 3.0 10 560 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C TO-264 AA (IXFK) G D S (TAB) G = Gate S = Source Features D = Drain TAB = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 300 0.4/6 Nm/lb.in. 6 10 g g RF capable Mosfets Rugged polysilicon gate cell structure Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 3.0 V 5.5 V 200 nA TJ = 25C TJ = 125C 100 A 3 mA 85 m VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 1 DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages PLUS 247TM package for clip or spring mounting Space savings High power density (c) 2002 IXYS All rights reserved 98855-A (9/02) IXFK 55N50F IXFX 55N50F Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 22 33 6700 VGS = 0 V, VDS = 25 V, f = 1 MHz 1250 330 24 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) 20 45 9.6 195 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 50 95 0.21 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W A A1 A2 b b1 b2 C D E e L L1 Q R Dim. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) PLUS 247TM Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 10 V; ID = 0.5 * ID25 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions V GS = 0 V Repetitive; pulse width limited by TJM IF = 25A, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 55 220 1.5 250 A A V ns C A Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline IF = 25A,-di/dt = 100 A/s, VR = 100 V 1.0 10 Note: 1. Pulse test, t 300 s, duty cycle d 2 % Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFK 55N50F IXFX 55N50F Fig. 1. Output Characteristics at 25oC 140 120 TJ = 25OC VGS = 10V 9V 8V Fig. 2. Output Characteristics at 125oC 100 TJ = 125OC VGS = 10V 9V 8V 7V 80 ID - Amperes ID - Amperes 100 80 60 40 20 7V 60 40 20 0 6V 5V 6V 5V 0 10 12 0 2 4 6 8 0 6 12 18 VDS - Volts VDS - Volts Fig. 3. RDS(ON) vs. Drain Current 4.0 3.5 VGS = 10V TJ = 150 C O Fig. 4. RDS(ON) vs. TJ 3 VGS = 10V RDS(ON) - Normalized 3.0 2.5 2.0 1.5 1.0 0.5 0 10 RDS(ON) - Normalized 2 ID = 55A ID = 27.5A 1 TJ = 25OC 20 30 40 50 0 -25 0 25 50 75 100 125 150 ID - Amperes T J - Degrees C Fig. 5. Drain Current vs. Case Temperature 60 55 50 45 40 35 30 25 20 15 10 5 0 Fig. 6. Admittance Curves 20 15 ID - Amperes ID - Amperes 10 TJ = 125oC TJ = 25oC TJ = -40oC 5 -50 -25 0 25 50 75 100 125 150 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 T C - Degrees C VGS - Volts (c) 2002 IXYS All rights reserved IXFK 55N50F IXFX 55N50F Fig. 7. Gate Charge Characteristic Curve 15 VDS = 250V ID = 27.5A Fig. 8. Capacitance Curves 10000 Ciss 5000 VGS - Volts 10 Capacitance - pF 2500 Coss f = 1MHz 5 1000 Crss 500 0 250 0 50 100 150 200 250 300 0 5 10 15 20 25 30 Gate Charge - nC VDS - Volts Fig. 9. Source Current vs. Source to Drain Voltage 25 20 ID - Amperes 15 TJ = 125 C 10 O TJ = 25 C O 5 0 0.2 0.4 0.6 0.8 1.0 VSD - Volts Fig. 10. Thermal Impedance 1 ZthJC - (K/W) 0.1 Single Pulse 0.01 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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